IPDD60R125G7
Manufacturer:
Infineon
Mfr.Part #:
IPDD60R125G7
Datasheet:
Description:
MOSFETs PG-HDSOP-10-1 SMD/SMT N-Channel number of channels:1 120 W 600 V Continuous Drain Current (ID):20 A 27 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 120 W |
| Number of Channels | 1 |
| Input capacitance | 1.08 nF |
| Continuous Drain Current (ID) | 20 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 27 nC |
| Drain to Source Resistance | 125 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
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