IPDD60R190G7
Manufacturer:
Infineon
Mfr.Part #:
IPDD60R190G7
Datasheet:
Description:
MOSFETs PG-HDSOP-10-1 SMD/SMT N-Channel number of channels:1 76 W 600 V Continuous Drain Current (ID):13 A 18 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 76 W |
| Number of Channels | 1 |
| Input capacitance | 718 pF |
| Continuous Drain Current (ID) | 13 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
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