IPG16N10S4L-61A
Manufacturer:
Infineon
Mfr.Part #:
IPG16N10S4L-61A
Datasheet:
Description:
MOSFETs TDSON-8 SMD/SMT N-Channel number of channels:2 29 W 100 V Continuous Drain Current (ID):16 A 11 nC
| Parameter | Value |
|---|---|
| Gate Charge | 11 nC |
| Gate to Source Threshold Voltage | 1.1 V |
| Continuous Drain Current (ID) | 16 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 78 mΩ |
| Input capacitance | 845 pF |
| Gate to Source Voltage (Vgs) | -16 V, 16 V |
| Power Dissipation | 29 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 2 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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