IPI65R190C6
Manufacturer:
Infineon
Mfr.Part #:
IPI65R190C6
Datasheet:
Description:
MOSFETs TO-262-3 Through Hole N-Channel number of channels:1 151 W 700 V Continuous Drain Current (ID):20.2 A 73 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 151 W |
| Number of Channels | 1 |
| Input capacitance | 1.62 nF |
| Continuous Drain Current (ID) | 20.2 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 73 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 700 V |
| Gate to Source Threshold Voltage | 3 V |
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