IPI90R1K2C3
Manufacturer:
Infineon
Mfr.Part #:
IPI90R1K2C3
Datasheet:
Description:
MOSFETs TO-262-3 Through Hole N-Channel number of channels:1 83 W 900 V Continuous Drain Current (ID):5.1 A 28 nC
| Parameter | Value |
|---|---|
| Gate Charge | 28 nC |
| Gate to Source Threshold Voltage | 3.5 V |
| Continuous Drain Current (ID) | 5.1 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1.2 Ω |
| Input capacitance | 710 pF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 83 W |
| Drain to Source Breakdown Voltage (Vds) | 900 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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