IPL60R650P6S
Manufacturer:
Infineon
Mfr.Part #:
IPL60R650P6S
Datasheet:
Description:
MOSFETs ThinPAK SMD/SMT N-Channel number of channels:1 56.8 W 600 V Continuous Drain Current (ID):6.7 A 12 nC
| Parameter | Value |
|---|---|
| Gate Charge | 12 nC |
| Gate to Source Threshold Voltage | 4 V |
| Continuous Drain Current (ID) | 6.7 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Drain to Source Resistance | 650 mΩ |
| Input capacitance | 557 pF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 56.8 W |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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