IPL60R650P6SATMA1
Manufacturer:
Infineon
Mfr.Part #:
IPL60R650P6SATMA1
Datasheet:
Description:
MOSFETs PowerTDFN-8 SMD/SMT N-Channel number of channels:1 56.8 W 600 V Continuous Drain Current (ID):6.7 A 12 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 56.8 W |
| Power Dissipation | 56.8 W |
| Number of Channels | 1 |
| Input capacitance | 557 pF |
| Continuous Drain Current (ID) | 6.7 A |
| Rds On Max | 650 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 33 ns |
| Element Configuration | Single |
| Fall Time | 14 ns |
| Rise Time | 7 ns |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 650 mΩ |
| Max Dual Supply Voltage | 600 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| On-State Resistance | 650 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 5000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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