IPP65R190CFD
Manufacturer:
Infineon
Mfr.Part #:
IPP65R190CFD
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 151 W 650 V Continuous Drain Current (ID):17.5 A 68 nC
| Parameter | Value |
|---|---|
| Gate Charge | 68 nC |
| Gate to Source Threshold Voltage | 4 V |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Continuous Drain Current (ID) | 17.5 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 190 mΩ |
| Input capacitance | 1.85 nF |
| Power Dissipation | 151 W |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 229
Distributors
pcbx
pcbxUnit Price$2.36563
Ext.Price$2.36563
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.36563 | $2.36563 |
| 10 | $2.25811 | $22.58110 |
| 25 | $2.16454 | $54.11350 |
| 50 | $2.07485 | $103.74250 |
| 100 | $2.03225 | $203.22500 |
| 300 | $2.01686 | $605.05800 |
| 500 | $2.00160 | $1000.80000 |
| 1000 | $1.98782 | $1987.82000 |