IPS60R2K1CE
Manufacturer:
Infineon
Mfr.Part #:
IPS60R2K1CE
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 38 W 600 V Continuous Drain Current (ID):3.7 A 6.7 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 38 W |
| Number of Channels | 1 |
| Input capacitance | 140 pF |
| Continuous Drain Current (ID) | 3.7 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 6.7 nC |
| Drain to Source Resistance | 2.1 Ω |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 3 V |
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