IPSA70R1K4CE
Manufacturer:
Infineon
Mfr.Part #:
IPSA70R1K4CE
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 53 W 750 V Continuous Drain Current (ID):5.4 A 10.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 53 W |
| Number of Channels | 1 |
| Input capacitance | 225 pF |
| Continuous Drain Current (ID) | 5.4 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 10.5 nC |
| Drain to Source Resistance | 1.4 Ω |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 750 V |
| Gate to Source Threshold Voltage | 3 V |
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