IPW60R190C6
Manufacturer:
Infineon
Mfr.Part #:
IPW60R190C6
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 151 W 600 V Continuous Drain Current (ID):20.2 A 63 nC
| Parameter | Value |
|---|---|
| Length | 16.13 mm |
| Width | 5.21 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 21.1 mm |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | NRND (Last Updated: 10 months ago) |
| Max Power Dissipation | 151 W |
| Power Dissipation | 151 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 1.4 nF |
| Continuous Drain Current (ID) | 20.2 A |
| Rds On Max | 190 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 110 ns |
| Element Configuration | Single |
| Rise Time | 11 ns |
| Gate Charge | 63 nC |
| Drain to Source Resistance | 190 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| On-State Resistance | 190 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 240 |
| Gate to Source Threshold Voltage | 3.5 V |
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