IPW65R110CFDA
Manufacturer:
Infineon
Mfr.Part #:
IPW65R110CFDA
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 277.8 W 650 V Continuous Drain Current (ID):31.2 A 118 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 277.8 W |
| Number of Channels | 1 |
| Input capacitance | 3.24 nF |
| Continuous Drain Current (ID) | 31.2 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 118 nC |
| Drain to Source Resistance | 99 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 3.5 V |
Stock: 80
Distributors
pcbx
pcbxUnit Price$2.85435
Ext.Price$2.85435
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.85435 | $2.85435 |
| 10 | $2.70908 | $27.09080 |
| 25 | $2.63235 | $65.80875 |
| 50 | $2.55779 | $127.88950 |
| 100 | $2.48534 | $248.53400 |
| 300 | $2.41494 | $724.48200 |
| 500 | $2.34657 | $1173.28500 |