IPW65R190CFD
Manufacturer:
Infineon
Mfr.Part #:
IPW65R190CFD
Datasheet:
Description:
MOSFETs TO-247 Through Hole N-Channel number of channels:1 151 W 650 V Continuous Drain Current (ID):17.5 A 68 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 151 W |
| Power Dissipation | 151 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.85 nF |
| Continuous Drain Current (ID) | 17.5 A |
| Rds On Max | 190 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type(Transistor Polarity) | N-Channel |
| Element Configuration | Single |
| Rise Time | 8.4 ns |
| Gate Charge | 68 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| On-State Resistance | 190 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 240 |
| Gate to Source Threshold Voltage | 4 V |
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