IPW90R120C3
Manufacturer:
Infineon
Mfr.Part #:
IPW90R120C3
Datasheet:
Description:
MOSFETs PG-TO247-3 Through Hole N-Channel number of channels:1 417 W 900 V Continuous Drain Current (ID):36 A 270 nC
| Parameter | Value |
|---|---|
| Length | 16.13 mm |
| Width | 5.21 mm |
| Termination | Through Hole |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 21.1 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 417 W |
| Power Dissipation | 417 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 6.8 nF |
| Continuous Drain Current (ID) | 36 A |
| Rds On Max | 120 mΩ |
| Drain to Source Voltage (Vdss) | 900 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 70 ns |
| Turn-Off Delay Time | 400 ns |
| Element Configuration | Single |
| Fall Time | 24 ns |
| Rise Time | 20 ns |
| Dual Supply Voltage | 900 V |
| Gate Charge | 270 nC |
| Drain to Source Resistance | 120 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 900 V |
| On-State Resistance | 120 mΩ |
| Package Quantity | 240 |
| Gate to Source Threshold Voltage | 2.5 V |
Stock: 142
Distributors
pcbx
pcbxUnit Price$11.92502
Ext.Price$11.92502
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $11.92502 | $11.92502 |
| 10 | $10.15613 | $101.56130 |
| 25 | $9.11027 | $227.75675 |
| 50 | $8.17219 | $408.60950 |