IRF1010NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF1010NPBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 180 W 55 V Continuous Drain Current (ID):85 A 80 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 55 V |
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 11 MΩ |
| Height | 16.51 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 85 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 180 W |
| Power Dissipation | 180 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.21 nF |
| Continuous Drain Current (ID) | 85 A |
| Rds On Max | 11 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Fall Time | 48 ns |
| Rise Time | 76 ns |
| Dual Supply Voltage | 55 V |
| Gate Charge | 80 nC |
| Drain to Source Resistance | 11 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 100 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 11 mΩ |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
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