IRF1018EPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF1018EPBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 110 W 60 V Continuous Drain Current (ID):79 A 46 nC
| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 4.826 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 8.4 MΩ |
| Height | 9.017 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 2.29 nF |
| Continuous Drain Current (ID) | 79 A |
| Rds On Max | 8.4 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Single |
| Fall Time | 46 ns |
| Rise Time | 35 ns |
| Gate Charge | 46 nC |
| Drain to Source Resistance | 8 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Recovery Time | 39 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| On-State Resistance | 8.4 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 11
Distributors
pcbx
pcbxUnit Price$0.89962
Ext.Price$0.89962
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.89962 | $0.89962 |
| 10 | $0.73901 | $7.39010 |
| 25 | $0.69375 | $17.34375 |
| 50 | $0.65126 | $32.56300 |
| 100 | $0.55746 | $55.74600 |
| 300 | $0.53443 | $160.32900 |
| 500 | $0.51235 | $256.17500 |
| 1000 | $0.49131 | $491.31000 |