IRF1104PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF1104PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 170 W 40 V Continuous Drain Current (ID):100 A 62 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 40 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 9 mΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 100 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 170 W |
| Power Dissipation | 170 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 2.9 nF |
| Continuous Drain Current (ID) | 100 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 28 ns |
| Element Configuration | Single |
| Fall Time | 19 ns |
| Rise Time | 114 ns |
| Dual Supply Voltage | 40 V |
| Gate Charge | 62 nC |
| Drain to Source Resistance | 9 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 110 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| On-State Resistance | 9 mΩ |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 3343
Distributors
pcbx
pcbxUnit Price$0.71301
Ext.Price$0.71301
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.71301 | $0.71301 |
| 10 | $0.64462 | $6.44620 |
| 25 | $0.64262 | $16.06550 |
| 50 | $0.64062 | $32.03100 |
| 100 | $0.63863 | $63.86300 |
| 300 | $0.60465 | $181.39500 |
| 500 | $0.57248 | $286.24000 |
| 1000 | $0.54203 | $542.03000 |