IRF1404PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF1404PBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 333 W 40 V Continuous Drain Current (ID):202 A 160 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 40 V |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4 mΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 162 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 333 W |
| Power Dissipation | 333 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 5.669 nF |
| Continuous Drain Current (ID) | 202 A |
| Rds On Max | 4 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 46 ns |
| Element Configuration | Single |
| Fall Time | 33 ns |
| Rise Time | 190 ns |
| Dual Supply Voltage | 40 V |
| Gate Charge | 160 nC |
| Drain to Source Resistance | 4 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 117 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| On-State Resistance | 4 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 727
Distributors
pcbx
pcbxUnit Price$0.81965
Ext.Price$0.81965
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.81965 | $0.81965 |
| 10 | $0.67267 | $6.72670 |
| 25 | $0.61074 | $15.26850 |
| 50 | $0.55450 | $27.72500 |
| 100 | $0.48684 | $48.68400 |
| 300 | $0.46410 | $139.23000 |
| 500 | $0.44242 | $221.21000 |
| 1000 | $0.41943 | $419.43000 |