IRF1405PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF1405PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 330 W 55 V Continuous Drain Current (ID):169 A 170 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 55 V |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 5.3 mΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 169 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 330 W |
| Power Dissipation | 330 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 5.48 nF |
| Continuous Drain Current (ID) | 169 A |
| Rds On Max | 5.3 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 130 ns |
| Element Configuration | Single |
| Fall Time | 110 ns |
| Rise Time | 190 ns |
| Dual Supply Voltage | 55 V |
| Gate Charge | 170 nC |
| Drain to Source Resistance | 5.3 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 130 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 5.3 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 189
Distributors
pcbx
pcbxUnit Price$0.74400
Ext.Price$0.74400
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.74400 | $0.74400 |
| 10 | $0.60941 | $6.09410 |
| 25 | $0.53191 | $13.29775 |
| 50 | $0.46426 | $23.21300 |
| 100 | $0.40187 | $40.18700 |
| 300 | $0.38070 | $114.21000 |
| 500 | $0.36065 | $180.32500 |
| 1000 | $0.33921 | $339.21000 |