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IRF200B211

Manufacturer:

Infineon

Mfr.Part #:

IRF200B211

Datasheet:
Description:

MOSFETs TO-220AB Through Hole N-Channel number of channels:1 80 W 200 V Continuous Drain Current (ID):12 A 15.3 nC

ParameterValue
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Resistance170 mΩ
PackagingTube
RoHSCompliant
Output Current1.4 A
Lifecycle StatusProduction (Last Updated: 7 months ago)
Max Power Dissipation80 W
Power Dissipation80 W
Number of Channels1
Input capacitance790 pF
Continuous Drain Current (ID)12 A
Rds On Max170 mΩ
Drain to Source Voltage (Vdss)200 V
FET Type(Transistor Polarity)N-Channel
Gate Charge15.3 nC
Drain to Source Resistance135 mΩ
Max Junction Temperature (Tj)175 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)200 V
On-State Resistance170 mΩ
Schedule B8541290080
Package Quantity1000
Gate to Source Threshold Voltage3 V

Stock: 214

Distributors
pcbx
Unit Price$1.26424
Ext.Price$1.26424
QtyUnit PriceExt.Price
1$1.26424$1.26424
10$0.99202$9.92020
25$0.77842$19.46050
50$0.61080$30.54000
100$0.54717$54.71700