IRF2807PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF2807PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 230 W 75 V Continuous Drain Current (ID):82 A 106.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 75 V |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 13 mΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 82 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 230 W |
| Power Dissipation | 230 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.82 nF |
| Continuous Drain Current (ID) | 82 A |
| Rds On Max | 13 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 49 ns |
| Element Configuration | Single |
| Fall Time | 48 ns |
| Rise Time | 64 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 106.7 nC |
| Drain to Source Resistance | 13 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 150 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 13 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 11452
Distributors
pcbx
pcbxUnit Price$0.52320
Ext.Price$0.52320
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.52320 | $0.52320 |
| 10 | $0.41280 | $4.12800 |
| 25 | $0.37142 | $9.28550 |
| 50 | $0.33418 | $16.70900 |
| 100 | $0.27810 | $27.81000 |
| 300 | $0.26478 | $79.43400 |
| 500 | $0.25210 | $126.05000 |
| 1000 | $0.23687 | $236.87000 |