IRF3415PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF3415PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 200 W 150 V Continuous Drain Current (ID):43 A 133.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 150 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 42 MΩ |
| Height | 15.24 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| Voltage | 150 V |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current | 43 A |
| Current Rating | 43 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 200 W |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 2.4 nF |
| Continuous Drain Current (ID) | 43 A |
| Rds On Max | 42 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 71 ns |
| Element Configuration | Single |
| Fall Time | 69 ns |
| Rise Time | 55 ns |
| Dual Supply Voltage | 150 V |
| Gate Charge | 133.3 nC |
| Drain to Source Resistance | 42 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 390 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| On-State Resistance | 42 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 28
Distributors
pcbx
pcbxUnit Price$1.43424
Ext.Price$1.43424
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.43424 | $1.43424 |
| 10 | $1.20864 | $12.08640 |
| 25 | $1.10828 | $27.70700 |
| 50 | $1.01626 | $50.81300 |
| 100 | $0.88610 | $88.61000 |
| 300 | $0.85414 | $256.24200 |
| 500 | $0.82334 | $411.67000 |
| 1000 | $0.79424 | $794.24000 |