IRF3709STRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF3709STRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 120 W 30 V Continuous Drain Current (ID):90 A 27 nC
| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.826 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 120 W |
| Number of Channels | 1 |
| Input capacitance | 2.672 nF |
| Continuous Drain Current (ID) | 90 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 21 ns |
| Element Configuration | Single |
| Fall Time | 9.2 ns |
| Rise Time | 171 ns |
| Gate Charge | 27 nC |
| Drain to Source Resistance | 10.5 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 20 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 9 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 3 V |
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