IRF3710PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF3710PBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 200 W 100 V Continuous Drain Current (ID):57 A 86.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 23 MΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 57 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 200 W |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.13 nF |
| Continuous Drain Current (ID) | 57 A |
| Rds On Max | 23 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 47 ns |
| Rise Time | 58 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 86.7 nC |
| Drain to Source Resistance | 23 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 220 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 23 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 15393
Distributors
pcbx
pcbxUnit Price$0.40301
Ext.Price$0.40301
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.40301 | $0.40301 |
| 10 | $0.31363 | $3.13630 |
| 25 | $0.29165 | $7.29125 |
| 50 | $0.27120 | $13.56000 |
| 100 | $0.23581 | $23.58100 |
| 300 | $0.23036 | $69.10800 |
| 500 | $0.22504 | $112.52000 |
| 1000 | $0.21738 | $217.38000 |