IRF3808PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF3808PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 330 W 75 V Continuous Drain Current (ID):140 A 150 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 75 V |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 7 Ω |
| Height | 16.51 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 140 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 330 W |
| Power Dissipation | 330 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 5.31 nF |
| Continuous Drain Current (ID) | 140 A |
| Rds On Max | 7 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 68 ns |
| Element Configuration | Single |
| Fall Time | 120 ns |
| Rise Time | 140 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 150 nC |
| Drain to Source Resistance | 7 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 7 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1113
Distributors
pcbx
pcbxUnit Price$1.48013
Ext.Price$1.48013
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.48013 | $1.48013 |
| 10 | $1.24531 | $12.45310 |
| 25 | $1.07412 | $26.85300 |
| 50 | $0.92646 | $46.32300 |
| 100 | $0.79909 | $79.90900 |
| 300 | $0.76626 | $229.87800 |
| 500 | $0.73478 | $367.39000 |
| 1000 | $0.70422 | $704.22000 |