IRF520NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF520NPBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 48 W 100 V Continuous Drain Current (ID):9.7 A 16.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 15.24 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 9.7 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 48 W |
| Power Dissipation | 48 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 330 pF |
| Continuous Drain Current (ID) | 9.7 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 4.5 ns |
| Turn-Off Delay Time | 32 ns |
| Element Configuration | Single |
| Fall Time | 23 ns |
| Rise Time | 23 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 16.7 nC |
| Drain to Source Resistance | 200 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 150 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 200 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 5097
Distributors
pcbx
pcbxUnit Price$0.34454
Ext.Price$0.34454
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.34454 | $0.34454 |
| 10 | $0.23169 | $2.31690 |
| 25 | $0.22763 | $5.69075 |
| 50 | $0.22364 | $11.18200 |
| 100 | $0.21972 | $21.97200 |
| 300 | $0.21843 | $65.52900 |
| 500 | $0.21715 | $108.57500 |
| 1000 | $0.21630 | $216.30000 |
| 3000 | $0.21370 | $641.10000 |
| 5000 | $0.21113 | $1055.65000 |
| 10000 | $0.20860 | $2086.00000 |