IRF520NSTRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF520NSTRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 3.8 W 100 V Continuous Drain Current (ID):9.7 A 16.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.826 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Current Rating | 9.7 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.8 W |
| Power Dissipation | 3.8 W |
| Number of Channels | 1 |
| Input capacitance | 330 pF |
| Continuous Drain Current (ID) | 9.7 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 4.5 ns |
| Turn-Off Delay Time | 32 ns |
| Element Configuration | Single |
| Fall Time | 23 ns |
| Rise Time | 23 ns |
| Gate Charge | 16.7 nC |
| Drain to Source Resistance | 200 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 200 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 2 V |
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