IRF5210LPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5210LPBF
Datasheet:
Description:
MOSFETs TO-262 Through Hole P-Channel number of channels:1 200 W -100 V Continuous Drain Current (ID):-40 A 120 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 60 mΩ |
| Height | 9.652 mm |
| Packaging | Bulk |
| Lead Free | Contains Lead |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -40 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 2.7 nF |
| Continuous Drain Current (ID) | -40 A |
| Rds On Max | 60 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 72 ns |
| Element Configuration | Single |
| Rise Time | 63 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 120 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| On-State Resistance | 60 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 4
Distributors
pcbx
pcbxUnit Price$5.22960
Ext.Price$5.22960
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $5.22960 | $5.22960 |
| 10 | $4.53754 | $45.37540 |
| 25 | $4.27723 | $106.93075 |
| 50 | $4.03185 | $201.59250 |
| 100 | $3.80056 | $380.05600 |