IRF5210PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5210PBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole P-Channel number of channels:1 200 W -100 V Continuous Drain Current (ID):-40 A 120 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 60 mΩ |
| Height | 15.24 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -40 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 200 W |
| Power Dissipation | 200 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 2.7 nF |
| Continuous Drain Current (ID) | -40 A |
| Rds On Max | 60 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 79 ns |
| Element Configuration | Single |
| Fall Time | 81 ns |
| Rise Time | 86 ns |
| Dual Supply Voltage | -100 V |
| Gate Charge | 120 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 260 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| On-State Resistance | 60 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 13489
Distributors
pcbx
pcbxUnit Price$0.78326
Ext.Price$0.78326
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.78326 | $0.78326 |
| 10 | $0.70301 | $7.03010 |
| 25 | $0.68067 | $17.01675 |
| 50 | $0.65904 | $32.95200 |
| 100 | $0.61537 | $61.53700 |
| 300 | $0.60382 | $181.14600 |
| 500 | $0.59248 | $296.24000 |
| 1000 | $0.58171 | $581.71000 |