IRF5210STRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5210STRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT P-Channel number of channels:1 3.1 W -100 V Continuous Drain Current (ID):-40 A 120 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 60 mΩ |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -40 A |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 3.1 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 2.78 nF |
| Continuous Drain Current (ID) | -40 A |
| Rds On Max | 60 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 72 ns |
| Element Configuration | Single |
| Fall Time | 55 ns |
| Rise Time | 63 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 120 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 260 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| On-State Resistance | 60 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1438
Distributors
pcbx
pcbxUnit Price$0.93446
Ext.Price$0.93446
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.93446 | $0.93446 |
| 10 | $0.76061 | $7.60610 |
| 25 | $0.70056 | $17.51400 |
| 50 | $0.64526 | $32.26300 |
| 100 | $0.59432 | $59.43200 |
| 300 | $0.52888 | $158.66400 |
| 500 | $0.47064 | $235.32000 |