IRF5305PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5305PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole P-Channel number of channels:1 110 W -55 V Continuous Drain Current (ID):-31 A 42 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -55 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 60 mΩ |
| Height | 8.77 mm |
| Packaging | Bulk |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -31 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 1.2 nF |
| Continuous Drain Current (ID) | -31 A |
| Rds On Max | 60 mΩ |
| Drain to Source Voltage (Vdss) | -55 V |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Rise Time | 66 ns |
| Dual Supply Voltage | -55 V |
| Gate Charge | 42 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 110 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -55 V |
| On-State Resistance | 60 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2745
Distributors
pcbx
pcbxUnit Price$0.65453
Ext.Price$0.65453
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.65453 | $0.65453 |
| 10 | $0.54240 | $5.42400 |
| 25 | $0.47800 | $11.95000 |
| 50 | $0.42125 | $21.06250 |
| 100 | $0.36899 | $36.89900 |
| 300 | $0.35176 | $105.52800 |
| 500 | $0.33533 | $167.66500 |
| 1000 | $0.31845 | $318.45000 |