IRF5305STRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5305STRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT P-Channel number of channels:1 110 W -55 V Continuous Drain Current (ID):-31 A 42 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -55 V |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 60 mΩ |
| Height | 4.826 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -31 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.8 W |
| Power Dissipation | 110 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 1.2 nF |
| Continuous Drain Current (ID) | -31 A |
| Rds On Max | 60 mΩ |
| Drain to Source Voltage (Vdss) | -55 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Fall Time | 63 ns |
| Rise Time | 66 ns |
| Dual Supply Voltage | -55 V |
| Gate Charge | 42 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 110 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -55 V |
| On-State Resistance | 60 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 17
Distributors
pcbx
pcbxUnit Price$1.30206
Ext.Price$1.30206
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.30206 | $1.30206 |
| 10 | $0.83869 | $8.38690 |
| 25 | $0.74910 | $18.72750 |
| 50 | $0.66908 | $33.45400 |
| 100 | $0.59760 | $59.76000 |
| 300 | $0.52476 | $157.42800 |
| 500 | $0.46080 | $230.40000 |
| 1000 | $0.43726 | $437.26000 |
| 3000 | $0.41492 | $1244.76000 |
| 5000 | $0.39372 | $1968.60000 |
| 10000 | $0.37360 | $3736.00000 |