IRF530NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF530NPBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 70 W 100 V Continuous Drain Current (ID):17 A 24.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 90 MΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 17 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 70 W |
| Power Dissipation | 70 W |
| Number of Channels | 1 |
| Input capacitance | 920 pF |
| Continuous Drain Current (ID) | 17 A |
| Rds On Max | 90 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 9.2 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 22 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 24.7 nC |
| Drain to Source Resistance | 90 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 140 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 90 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2518
Distributors
pcbx
pcbxUnit Price$0.35088
Ext.Price$0.35088
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.35088 | $0.35088 |
| 10 | $0.30951 | $3.09510 |
| 50 | $0.27302 | $13.65100 |
| 100 | $0.23695 | $23.69500 |
| 500 | $0.20564 | $102.82000 |
| 1000 | $0.19661 | $196.61000 |
| 3000 | $0.18798 | $563.94000 |
| 5000 | $0.17973 | $898.65000 |