IRF540NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF540NPBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 130 W 100 V Continuous Drain Current (ID):33 A 47.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 44 MΩ |
| Height | 8.77 mm |
| Packaging | Bulk |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 27 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 130 W |
| Power Dissipation | 130 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.96 nF |
| Continuous Drain Current (ID) | 33 A |
| Rds On Max | 44 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Rise Time | 35 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 47.3 nC |
| Drain to Source Resistance | 44 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 170 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 44 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 30900
Distributors
pcbx
pcbxUnit Price$0.28512
Ext.Price$0.28512
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.28512 | $0.28512 |
| 10 | $0.25491 | $2.54910 |
| 50 | $0.22790 | $11.39500 |
| 100 | $0.20201 | $20.20100 |
| 500 | $0.17906 | $89.53000 |
| 1000 | $0.17603 | $176.03000 |
| 3000 | $0.17305 | $519.15000 |
| 5000 | $0.17013 | $850.65000 |