IRF540PBF
Manufacturer:
Vishay
Mfr.Part #:
IRF540PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 150 W 100 V Continuous Drain Current (ID):28 A 72 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.51 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 77 mΩ |
| Height | 9.01 mm |
| Packaging | Bulk |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 100 V |
| REACH SVHC | Unknown |
| Weight | 6 g |
| Number of Elements | 1 |
| Current | 28 A |
| Current Rating | 28 A |
| Max Power Dissipation | 150 W |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.7 nF |
| Continuous Drain Current (ID) | 28 A |
| Rds On Max | 77 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 53 ns |
| Element Configuration | Single |
| Rise Time | 44 ns |
| Gate Charge | 72 nC |
| Drain to Source Resistance | 77 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 360 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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