IRF5801TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5801TRPBF
Datasheet:
Description:
MOSFETs TSOP-6 SMD/SMT N-Channel number of channels:1 2 W 200 V Continuous Drain Current (ID):600 mA 3.9 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 2.9972 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 2.2 Ω |
| Height | 990.6 µm |
| Packaging | Reel |
| Lead Free | Contains Lead |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 600 mA |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 5.5 V |
| Number of Channels | 1 |
| Input capacitance | 88 pF |
| Continuous Drain Current (ID) | 600 mA |
| Rds On Max | 2.2 Ω |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 6.5 ns |
| Turn-Off Delay Time | 8.8 ns |
| Element Configuration | Single |
| Rise Time | 8 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 3.9 nC |
| Drain to Source Resistance | 2.2 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 5.5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 2.2 Ω |
| Schedule B | 8541290080 |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 77
Distributors
pcbx
pcbxUnit Price$0.12326
Ext.Price$0.12326
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.12326 | $0.12326 |
| 10 | $0.12172 | $1.21720 |
| 50 | $0.12019 | $6.00950 |
| 100 | $0.11872 | $11.87200 |
| 500 | $0.11727 | $58.63500 |