IRF5803TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5803TRPBF
Datasheet:
Description:
MOSFETs TSOP-6 SMD/SMT P-Channel number of channels:1 2 W -40 V Continuous Drain Current (ID):-3.4 A 25 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -40 V |
| Length | 3.1 mm |
| Width | 1.4986 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 112 MΩ |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -3.4 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Input capacitance | 1.11 nF |
| Continuous Drain Current (ID) | -3.4 A |
| Rds On Max | 112 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 43 ns |
| Turn-Off Delay Time | 88 ns |
| Fall Time | 50 ns |
| Rise Time | 550 ns |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 112 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -40 V |
| On-State Resistance | 112 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 2080
Distributors
pcbx
pcbxUnit Price$0.17328
Ext.Price$0.17328
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.17328 | $0.17328 |
| 10 | $0.16324 | $1.63240 |
| 50 | $0.15379 | $7.68950 |
| 100 | $0.14488 | $14.48800 |
| 500 | $0.13648 | $68.24000 |
| 1000 | $0.11709 | $117.09000 |
| 3000 | $0.10045 | $301.35000 |
| 5000 | $0.09761 | $488.05000 |