IRF5805TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF5805TRPBF
Datasheet:
Description:
MOSFETs TSOP-6 SMD/SMT P-Channel number of channels:1 2 W -30 V Continuous Drain Current (ID):3.8 A 11 nC
| Parameter | Value |
|---|---|
| Length | 3 mm |
| Width | 1.7018 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 990.6 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | -2.5 V |
| Number of Channels | 1 |
| Input capacitance | 511 pF |
| Continuous Drain Current (ID) | 3.8 A |
| Rds On Max | 98 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 90 ns |
| Element Configuration | Single |
| Rise Time | 14 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 11 nC |
| Drain to Source Resistance | 98 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -2.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| On-State Resistance | 98 mΩ |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | -20 V, 20 V |
| FET Type(Transistor Polarity) | P-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||