IRF6215PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6215PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole P-Channel number of channels:1 110 W -150 V Continuous Drain Current (ID):-13 A 44 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -150 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 290 mΩ |
| Height | 15.24 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -13 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 860 pF |
| Continuous Drain Current (ID) | -13 A |
| Rds On Max | 290 mΩ |
| Drain to Source Voltage (Vdss) | -150 V |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 53 ns |
| Element Configuration | Single |
| Fall Time | 37 ns |
| Rise Time | 36 ns |
| Dual Supply Voltage | -150 V |
| Gate Charge | 44 nC |
| Drain to Source Resistance | 290 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 240 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -150 V |
| On-State Resistance | 290 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
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