IRF6216TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6216TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W -150 V Continuous Drain Current (ID):2.2 A 33 nC
| Parameter | Value |
|---|---|
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 240 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -5 V |
| Number of Channels | 1 |
| Input capacitance | 1.28 nF |
| Continuous Drain Current (ID) | 2.2 A |
| Rds On Max | 240 mΩ |
| Drain to Source Voltage (Vdss) | -150 V |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 33 ns |
| Element Configuration | Single |
| Fall Time | 26 ns |
| Rise Time | 15 ns |
| Dual Supply Voltage | 150 V |
| Gate Charge | 33 nC |
| Drain to Source Resistance | 240 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 5 V |
| Recovery Time | 120 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -150 V |
| On-State Resistance | 240 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 5 V |
| FET Type(Transistor Polarity) | P-Channel |
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