IRF630
Manufacturer:
STMicroelectronics
Mfr.Part #:
IRF630
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 75 W 200 V Continuous Drain Current (ID):9 A 31 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Resistance | 400 mΩ |
| Height | 15.75 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 9 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 75 W |
| Power Dissipation | 75 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 700 pF |
| Continuous Drain Current (ID) | 9 A |
| Rds On Max | 400 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 10 ns |
| Reverse Recovery Time | 170 ns |
| Element Configuration | Single |
| Rise Time | 15 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 31 nC |
| Drain to Source Resistance | 400 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 109
Distributors
pcbx
pcbxUnit Price$0.76483
Ext.Price$0.76483
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.76483 | $0.76483 |
| 10 | $0.62554 | $6.25540 |
| 25 | $0.58884 | $14.72100 |
| 50 | $0.55430 | $27.71500 |
| 100 | $0.49131 | $49.13100 |
| 300 | $0.46938 | $140.81400 |
| 500 | $0.44843 | $224.21500 |
| 1000 | $0.42699 | $426.99000 |