IRF630NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF630NPBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 82 W 200 V Continuous Drain Current (ID):9.3 A 23.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 300 mΩ |
| Height | 8.77 mm |
| Packaging | Bulk |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 9.3 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 82 W |
| Power Dissipation | 82 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 575 pF |
| Continuous Drain Current (ID) | 9.3 A |
| Rds On Max | 300 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 7.9 ns |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Single |
| Rise Time | 14 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 23.3 nC |
| Drain to Source Resistance | 300 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 176 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 300 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 182
Distributors
pcbx
pcbxUnit Price$0.34445
Ext.Price$0.34445
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.34445 | $0.34445 |
| 10 | $0.28998 | $2.89980 |
| 50 | $0.24413 | $12.20650 |
| 100 | $0.21201 | $21.20100 |
| 500 | $0.18411 | $92.05500 |
| 1000 | $0.17606 | $176.06000 |
| 3000 | $0.16837 | $505.11000 |
| 5000 | $0.16101 | $805.05000 |