IRF640NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF640NPBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 150 W 200 V Continuous Drain Current (ID):18 A 44.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 150 mΩ |
| Height | 9.017 mm |
| Packaging | Bulk |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 18 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 150 W |
| Power Dissipation | 150 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 1.16 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 150 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 23 ns |
| Element Configuration | Single |
| Rise Time | 19 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 44.7 nC |
| Drain to Source Resistance | 150 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 241 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 150 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 26827
Distributors
pcbx
pcbxUnit Price$0.23683
Ext.Price$0.23683
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.23683 | $0.23683 |
| 10 | $0.20855 | $2.08550 |
| 50 | $0.18365 | $9.18250 |
| 100 | $0.15798 | $15.79800 |
| 500 | $0.13590 | $67.95000 |
| 1000 | $0.13133 | $131.33000 |
| 3000 | $0.12691 | $380.73000 |