IRF640NSTRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF640NSTRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 150 W 200 V Continuous Drain Current (ID):18 A 44.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 150 mΩ |
| Height | 4.826 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 18 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 150 W |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.16 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 150 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 23 ns |
| Element Configuration | Single |
| Fall Time | 5.5 ns |
| Rise Time | 19 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 44.7 nC |
| Drain to Source Resistance | 150 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 251 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 150 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 1653
Distributors
pcbx
pcbxUnit Price$0.68179
Ext.Price$0.68179
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.68179 | $0.68179 |
| 10 | $0.56362 | $5.63620 |
| 25 | $0.52290 | $13.07250 |
| 50 | $0.48512 | $24.25600 |
| 100 | $0.45008 | $45.00800 |
| 300 | $0.40153 | $120.45900 |
| 500 | $0.35822 | $179.11000 |