IRF640PBF
Manufacturer:
Vishay
Mfr.Part #:
IRF640PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 125 W 200 V Continuous Drain Current (ID):18 A 7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.41 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 180 mΩ |
| Height | 9.01 mm |
| Packaging | Bulk |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 6 g |
| Number of Elements | 1 |
| Current Rating | 18 A |
| Max Power Dissipation | 125 W |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.3 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 180 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Rise Time | 51 ns |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 180 mΩ |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 188
Distributors
pcbx
pcbxUnit Price$0.68794
Ext.Price$0.68794
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.68794 | $0.68794 |
| 10 | $0.54653 | $5.46530 |
| 25 | $0.50916 | $12.72900 |
| 50 | $0.47434 | $23.71700 |
| 100 | $0.40934 | $40.93400 |
| 300 | $0.38716 | $116.14800 |
| 500 | $0.36618 | $183.09000 |
| 1000 | $0.34387 | $343.87000 |