IRF6614TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6614TRPBF
Datasheet:
Description:
MOSFETs DIRECTFET SMD/SMT N-Channel number of channels:1 42 W 40 V Continuous Drain Current (ID):12.7 A 29 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 40 V |
| Length | 4.826 mm |
| Width | 3.95 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 5 |
| Resistance | 8.3 MΩ |
| Height | 506 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | MG-WDSON-5 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 12.7 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.1 W |
| Power Dissipation | 42 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 2.56 nF |
| Continuous Drain Current (ID) | 12.7 A |
| Rds On Max | 8.3 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 18 ns |
| Fall Time | 3.6 ns |
| Rise Time | 27 ns |
| Gate Charge | 29 nC |
| Drain to Source Resistance | 5.9 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| On-State Resistance | 8.3 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4800 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 58
Distributors
pcbx
pcbxUnit Price$8.99251
Ext.Price$8.99251
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $8.99251 | $8.99251 |
| 10 | $8.86166 | $88.61660 |
| 25 | $8.74725 | $218.68125 |
| 50 | $8.63431 | $431.71550 |
| 100 | $8.52281 | $852.28100 |