IRF6616TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6616TRPBF
Datasheet:
Description:
MOSFETs DIRECTFET SMD/SMT N-Channel number of channels:1 89 W 40 V Continuous Drain Current (ID):19 A 29 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 6.35 mm |
| Width | 5.0546 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 5 |
| Height | 508 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | MG-WDSON-5 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 19 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.8 W |
| Power Dissipation | 89 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 3.765 nF |
| Continuous Drain Current (ID) | 19 A |
| Rds On Max | 5 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 21 ns |
| Fall Time | 4.4 ns |
| Rise Time | 19 ns |
| Gate Charge | 29 nC |
| Drain to Source Resistance | 6.2 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| On-State Resistance | 5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4800 |
| Gate to Source Threshold Voltage | 2 V |
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