IRF6665TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6665TRPBF
Datasheet:
Description:
MOSFETs SMD SMD/SMT N-Channel number of channels:1 42 W 100 V Continuous Drain Current (ID):4.2 A 8.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 4.826 mm |
| Width | 3.95 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 3 |
| Height | 506 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 4.2 A |
| Max Power Dissipation | 2.2 W |
| Power Dissipation | 42 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 530 pF |
| Continuous Drain Current (ID) | 4.2 A |
| Rds On Max | 62 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 7.4 ns |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Single |
| Fall Time | 4.3 ns |
| Rise Time | 2.8 ns |
| Gate Charge | 8.7 nC |
| Drain to Source Resistance | 53 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 62 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4800 |
| Gate to Source Threshold Voltage | 4 V |
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