IRF6668TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6668TRPBF
Datasheet:
Description:
MOSFETs DIRECTFET SMD/SMT N-Channel number of channels:1 89 W 80 V Continuous Drain Current (ID):55 A 22 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 80 V |
| Length | 6.35 mm |
| Width | 5.0546 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 3 |
| Height | 533.4 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Current Rating | 55 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.8 W |
| Power Dissipation | 89 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.32 nF |
| Continuous Drain Current (ID) | 55 A |
| Rds On Max | 15 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 19 ns |
| Turn-Off Delay Time | 7.1 ns |
| Element Configuration | Single |
| Fall Time | 23 ns |
| Rise Time | 13 ns |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| On-State Resistance | 15 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4800 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 3167
Distributors
pcbx
pcbxUnit Price$1.67737
Ext.Price$1.67737
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.67737 | $1.67737 |
| 10 | $1.08918 | $10.89180 |
| 25 | $0.96207 | $24.05175 |
| 50 | $0.84980 | $42.49000 |
| 100 | $0.75063 | $75.06300 |
| 300 | $0.67167 | $201.50100 |
| 500 | $0.60101 | $300.50500 |
| 1000 | $0.51467 | $514.67000 |
| 3000 | $0.51467 | $1544.01000 |