IRF6674TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF6674TRPBF
Datasheet:
Description:
MOSFETs DIRECTFET SMD/SMT N-Channel number of channels:1 89 W 60 V Continuous Drain Current (ID):67 A 24 nC
| Parameter | Value |
|---|---|
| Length | 6.35 mm |
| Width | 5.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 5 |
| Height | 530 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | MG-WDSON-5 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.6 W |
| Power Dissipation | 89 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.35 nF |
| Continuous Drain Current (ID) | 67 A |
| Rds On Max | 11 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 12 ns |
| Fall Time | 8.7 ns |
| Rise Time | 12 ns |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 9 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| On-State Resistance | 11 mΩ |
| Package Quantity | 4800 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 5016
Distributors
pcbx
pcbxUnit Price$1.40807
Ext.Price$1.40807
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.40807 | $1.40807 |
| 10 | $1.09517 | $10.95170 |
| 25 | $0.96560 | $24.14000 |
| 50 | $0.85136 | $42.56800 |
| 100 | $0.75063 | $75.06300 |
| 300 | $0.68351 | $205.05300 |
| 500 | $0.62239 | $311.19500 |
| 1000 | $0.56169 | $561.69000 |
| 3000 | $0.49586 | $1487.58000 |